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Advance Technical Information
Polar3TM HiperFETTM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
IXFP22N60P3 IXFQ22N60P3 IXFH22N60P3
VDSS ID25
RDS(on)
= 600V = 22A 360m
TO-220AB (IXFP)
G
DS
Tab
TO-3P (IXFQ) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL Tsold Md Weight 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque TO-220 TO-3P TO-247 Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150C TC = 25C Maximum Ratings 600 600 30 40 22 55 11 400 35 500 -55 ... +150 150 -55 ... +150 300 260 1.13 / 10 3.0 5.5 6.0 V V V V A A A mJ V/ns W C C C C C Nm/lb.in. g g g G D S G D
S Tab
TO-247 (IXFH)
Tab D = Drain Tab = Drain
G = Gate S = Source Features
Fast Intrinsic Rectifier Avalanche Rated Low RDS(ON) and QG Low Package Inductance Advantages
Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 1.5mA VGS = 30V, VDS = 0V VDS = VDSS, VGS= 0V TJ = 125C
Characteristic Values Min. Typ. Max. 600 3.0 5.0 100 V V nA
High Power Density Easy to Mount Space Savings Applications Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls
25 A 1.25 mA 360 m
VGS = 10V, ID = 0.5 * ID25, Note 1
(c) 2011 IXYS CORPORATION, All Rights Reserved
DS100321(03/11)
IXFP22N60P3 IXFQ22N60P3 IXFH22N60P3
Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) gfs Ciss Coss Crss RGi td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS TO-220 TO-247 & TO-3P VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Gate Input Resistance Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 1 (External) VGS = 0V, VDS = 25V, f = 1MHz VDS = 20V, ID = 0.5 * ID25, Note 1 Characteristic Values Min. Typ. Max. 14 24 2600 265 3.4 1.3 28 17 54 19 38 10 11 0.50 0.25 S pF pF pF ns ns ns ns nC nC nC 0.25 C/W C/W C/W TO-3P Outline
Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) IS ISM VSD trr IRM QRM Note VGS = 0V Repetitive, Pulse Width Limited by TJM IF = IS, VGS = 0V, Note 1 IF = 11A, -di/dt = 100A/s VR = 100V, VGS = 0V 1. Pulse test, t 300s, duty cycle, d 2%. TO-220 Outline
e
Characteristic Values Min. Typ. Max. 22 88 1.4 250 8.0 0.8 A A V ns A C
1 2 3
TO-247 Outline
P
Terminals: 1 - Gate 3 - Source
2 - Drain
Dim. Pins: 1 - Gate 2 - Drain 3 - Source
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505
Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
7,157,338B2
6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537
IXFP22N60P3 IXFQ22N60P3 IXFH22N60P3
Fig. 1. Output Characteristics @ T J = 25C
22 20 18 35 16 6V 30 7V VGS = 10V 7V 45 40 VGS = 10V
Fig. 2. Extended Output Characteristics @ T J = 25C
ID - Amperes
ID - Amperes
14 12 10 8 6
25 20 6V 15 10
4 2 0 0 1 2 3 4 5 6 7 8 9 5V 5 5V 0 0 5 10 15 20 25 30
VDS - Volts
VDS - Volts
Fig. 3. Output Characteristics @ T J = 125C
22 20 18 VGS = 10V 7V 3.4 3.0 2.6 2.2
Fig. 4. RDS(on) Normalized to ID = 11A Value vs. Junction Temperature
VGS = 10V
ID - Amperes
14 12 10 8 6 4 2 4V 0 0 2 4 6 8 10 12 14 16 18 20 22 5V
R DS(on) - Normalized
16
6V
I D = 22A 1.8 I D = 11A 1.4 1.0 0.6 0.2 -50 -25 0 25 50 75 100 125 150
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 11A Value vs. Drain Current
3.4 VGS = 10V 3.0 TJ = 125C 20 24
Fig. 6. Maximum Drain Current vs. Case Temperature
R DS(on) - Normalized
2.6
2.2 1.8 TJ = 25C 1.4
ID - Amperes
16
12
8
4 1.0 0 0.6 0 5 10 15 20 25 30 35 40 45 -50 -25 0 25 50 75 100 125 150
TC - Degrees Centigrade
ID - Amperes
(c) 2011 IXYS CORPORATION, All Rights Reserved
IXFP22N60P3 IXFQ22N60P3 IXFH22N60P3
Fig. 7. Input Admittance
35 45 TJ = - 40C 30 TJ = 125C 25C - 40C 40 35 25C
Fig. 8. Transconductance
25
20
g f s - Siemens
30 25 20 15 125C
ID - Amperes
15
10 10 5 5 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 5 10 15 20 25 30 35
0
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
40 35 30 7 10 9 8 VDS = 300V I D = 11A I G = 10mA
Fig. 10. Gate Charge
IS - Amperes
VGS - Volts
TJ = 125C TJ = 25C 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
25 20 15 10 5 0
6 5 4 3 2 1 0 0 5 10 15 20 25 30 35 40
VSD - Volts
QG - NanoCoulombs
Fig. 11. Capacitance
10,000 100
Fig. 12. Forward-Bias Safe Operating Area
RDS(on) Limit 100s
f = 1 MHz
Ciss
Capacitance - PicoFarads
1,000 10 Coss
100
ID - Amperes
1
10 Crss
TJ = 150C TC = 25C Single Pulse 1ms 0.1
1 0 5 10 15 20 25 30 35 40
10
100
1,000
VDS - Volts
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFP22N60P3 IXFQ22N60P3 IXFH22N60P3
Fig. 13. Maximum Transient Thermal Impedance
1
0.1
Z (th)JC - C / W
0.01
0.001 0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
(c) 2011 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_22N60P3(W6)03-31-11

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